Chin. J. Semicond. > 1986, Volume 7 > Issue 3 > 319-323
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200ps脉冲激发的MBEGaAs-Ga_(1-x)Al_xAs多量子阱异质结的光致发光特性

徐仲英 , 许继宗 , 李玉璋 , 郑宝真 , 徐俊英 , 庄蔚华 and 陈宗圭

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(3): 319-323
      徐仲英, 许继宗, 李玉璋, 郑宝真, 徐俊英, 庄蔚华, 陈宗圭. 200ps脉冲激发的MBEGaAs-Ga_(1-x)Al_xAs多量子阱异质结的光致发光特性[J]. 半导体学报(英文版), 1986, 7(3): 319-323.
      Citation:
      徐仲英, 许继宗, 李玉璋, 郑宝真, 徐俊英, 庄蔚华, 陈宗圭. 200ps脉冲激发的MBEGaAs-Ga_(1-x)Al_xAs多量子阱异质结的光致发光特性[J]. 半导体学报(英文版), 1986, 7(3): 319-323.
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      • Received Date: 2015-08-20

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