Chin. J. Semicond. > 1986, Volume 7 > Issue 5 > 504-508
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GaAs中子嬗变掺杂热退火效应的沟道分析

郑胜男 , 阎建华 , 王豫生 , 李跃鑫 , 谢葆珍 and 莫培根

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(5): 504-508
      郑胜男, 阎建华, 王豫生, 李跃鑫, 谢葆珍, 莫培根. GaAs中子嬗变掺杂热退火效应的沟道分析[J]. 半导体学报(英文版), 1986, 7(5): 504-508.
      Citation:
      郑胜男, 阎建华, 王豫生, 李跃鑫, 谢葆珍, 莫培根. GaAs中子嬗变掺杂热退火效应的沟道分析[J]. 半导体学报(英文版), 1986, 7(5): 504-508.
      shu

      • Received Date: 2015-08-20

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