| Citation: |
Peng Shaoquan, Du Lei, Zhuang Yiqi, Bao Junlin, Liu Jiang, Su Yahui. A Forecast Technique for Radiation-Resistant Capability on MOSFETs[J]. Journal of Semiconductors, 2008, 29(7): 1360-1364.
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Peng S Q, Du L, Zhuang Y Q, Bao J L, Liu J, Su Y H. A Forecast Technique for Radiation-Resistant Capability on MOSFETs[J]. J. Semicond., 2008, 29(7): 1360.
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A Forecast Technique for Radiation-Resistant Capability on MOSFETs
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Abstract
Based on metal-oxide-semiconductor field effect transistor (MOSFET) noise theory of carrier number fluctuation and mobility fluctuation,a forecast model of radiation-resistant capability is established.This model can preferably forecast post-irradiation threshold voltage drift due to oxide traps and interface traps through the pre-irradiation 1/f noise parameter.The simulation results of the model agree well with the measurement results.The forecast model is validated.The model provides a forecast technique for radiation-resistant capability on MOSFETs for engineering applications. -
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