Chin. J. Semicond. > 1998, Volume 19 > Issue 3 > 206-213
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薄层SOI/MOSFET’s热载流子电流的数值模拟

曹建民 , 吴传良 , 张文俊 , 范辉 , 沈文正 and 黄敞

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(3): 206-213
      曹建民, 吴传良, 张文俊, 范辉, 沈文正, 黄敞. 薄层SOI/MOSFET’s热载流子电流的数值模拟[J]. 半导体学报(英文版), 1998, 19(3): 206-213.
      Citation:
      曹建民, 吴传良, 张文俊, 范辉, 沈文正, 黄敞. 薄层SOI/MOSFET’s热载流子电流的数值模拟[J]. 半导体学报(英文版), 1998, 19(3): 206-213.
      shu

      • Received Date: 2015-08-20

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