Chin. J. Semicond. > 1990, Volume 11 > Issue 1 > 68-71
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流体静压力下Hg_(1-x)Cd_xTe p-n结的伏安特性

李齐光 , 姜山 , 袁皓心 , 陈泉森 and 沈学础

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(1): 68-71
      李齐光, 姜山, 袁皓心, 陈泉森, 沈学础. 流体静压力下Hg_(1-x)Cd_xTe p-n结的伏安特性[J]. 半导体学报(英文版), 1990, 11(1): 68-71.
      Citation:
      李齐光, 姜山, 袁皓心, 陈泉森, 沈学础. 流体静压力下Hg_(1-x)Cd_xTe p-n结的伏安特性[J]. 半导体学报(英文版), 1990, 11(1): 68-71.
      shu

      • Received Date: 2015-08-19

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