| Citation: |
Gao Jinxia, Zhang Yimen, Zhang Yuming. Study of Electron Mobility in 4H-SiC Buried-Channel MOSFETs[J]. Journal of Semiconductors, 2006, 27(2): 283-289.
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Gao J X, Zhang Y M, Zhang Y M. Study of Electron Mobility in 4H-SiC Buried-Channel MOSFETs[J]. Chin. J. Semicond., 2006, 27(2): 283.
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Study of Electron Mobility in 4H-SiC Buried-Channel MOSFETs
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Abstract
The effects of several factors on mobility in 4H-SiC buried-channel (BC) MOSFETs are studied.A simple model that gives a quantitative analysis of series resistance effects on the effective mobility and field-effect mobility is proposed.A series resistance not only decreases field-effect mobility but also reduces the gate voltage corresponding to the peak field-effect mobility.The dependence of the peak field-effect mobility on series resistance follows a simple quadratic polynomial.The effects of uniform and exponential interface state distributions in the forbidden band on field-effect mobility are analyzed with an analytical model.The effects of non-uniform interface states can be ignored at lower gate voltages but become more obvious as the gate bias increases.-
Keywords:
- 4H-SiC,
- buried-channel,
- MOSFET,
- mobility,
- series resistance,
- interface states
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References
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Proportional views
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