| Citation: |
Wang Yong, Li Jingqiang, Zhang Zhiguo, Feng Zhen, Song Jianbo, Feng Zhihong, Cai Shujun, Yang Kewu. X-Band Internally-Matched GaN HEMTs[J]. Journal of Semiconductors, 2008, 29(9): 1783-1785.
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Wang Y, Li J Q, Zhang Z G, Feng Z, Song J B, Feng Z H, Cai S J, Yang K W. X-Band Internally-Matched GaN HEMTs[J]. J. Semicond., 2008, 29(9): 1783.
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X-Band Internally-Matched GaN HEMTs
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Abstract
With a self-developed GaN HEMT,the magnitude of leakage current between gate and drain is reduced to 1E-6A,the breakdown voltage is increased effectively,and the operating characteristic is improved.An MIS-GaN HEMT with 2.5mm gate-width is fabricated.When the operation voltage is 33V,the resultant device delivers a saturation output power of 18.2W,a power gain of 7.6dB,and a peak power added efficiency of 43.0% at a frequency of 8GHz CW.The internally-matched GaN HEMTs with a total gate-width of 2.5mm×4 deliver a saturation output power of 64.5W,a power gain of 7.2dB,and a power added efficiency of 39% at a frequency of 8GHz CW.-
Keywords:
- GaN HEMT,
- internal matching,
- output power,
- power gain,
- power added efficiency
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References
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Proportional views
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