Chin. J. Semicond. > 2000, Volume 21 > Issue 4 > 346-353
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生长于Si(111)上的氮化硅薄膜表面结构

翟光杰 , 杨建树 , 陈显邦 and 王学森

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Key words: 硅, 氮化硅, 表面结构, 扫描隧道显微镜, 低能电子衍射

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(4): 346-353
      翟光杰, 杨建树, 陈显邦, 王学森. 生长于Si(111)上的氮化硅薄膜表面结构[J]. 半导体学报(英文版), 2000, 21(4): 346-353.
      Citation:
      翟光杰, 杨建树, 陈显邦, 王学森. 生长于Si(111)上的氮化硅薄膜表面结构[J]. 半导体学报(英文版), 2000, 21(4): 346-353.
      shu

      • Received Date: 2015-08-20

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