Chin. J. Semicond. > 1995, Volume 16 > Issue 7 > 517-523
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薄膜全耗尽SIMOX／SOIMOSFET中单晶体管Latch引起的器件性能蜕变实验研究

程玉华，魏丽琼，孙玉秀，阎桂珍，李映雪，武国英，王阳元

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(7): 517-523
      程玉华，魏丽琼，孙玉秀，阎桂珍，李映雪，武国英，王阳元. 薄膜全耗尽SIMOX／SOIMOSFET中单晶体管Latch引起的器件性能蜕变实验研究[J]. 半导体学报(英文版), 1995, 16(7): 517-523.
      Citation:
      程玉华，魏丽琼，孙玉秀，阎桂珍，李映雪，武国英，王阳元. 薄膜全耗尽SIMOX／SOIMOSFET中单晶体管Latch引起的器件性能蜕变实验研究[J]. 半导体学报(英文版), 1995, 16(7): 517-523.
      shu

      • Received Date: 2015-08-19

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