Chin. J. Semicond. > 2001, Volume 22 > Issue 7 > 904-907
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薄二氧化硅MOS电容电离辐射陷阱电荷研究

刘忠立

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Key words: MOS电容, 电离辐射, 陷阱电荷

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(7): 904-907
      刘忠立. 薄二氧化硅MOS电容电离辐射陷阱电荷研究[J]. 半导体学报(英文版), 2001, 22(7): 904-907.
      Citation:
      刘忠立. 薄二氧化硅MOS电容电离辐射陷阱电荷研究[J]. 半导体学报(英文版), 2001, 22(7): 904-907.
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      • Received Date: 2015-08-20

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