| Citation: |
Li Qiang, Wang Junyu, Han Yifeng，and Min Hao. Design and Fabrication of Schottky Diode with Standard CMOS Process[J]. Journal of Semiconductors, 2005, 26(2): 238-242.
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Design and Fabrication of Schottky Diode with Standard CMOS Process[J]. Chin. J. Semicond., 2005, 26(2): 238.
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Design and Fabrication of Schottky Diode with Standard CMOS Process
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Abstract
Design and fabrication of Schottky barrier diodes (SBD) with a commercial standard 0.35μm CMOS process are described.In order to reduce the series resistor of Schottky contact,interdigitating the fingers of schottky diode layout is adopted.The I-V,C-V，and S parameter are measured.The parameters of realized SBD such as the saturation current,breakdown voltage，and the Schottky barrier height are given.The SPICE simulation model of the realized SBDs is given. -
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