Chin. J. Semicond. > 2004, Volume 25 > Issue 4 > 436-440
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HALO结构pMOSFETs在V_g=V_d/2应力模式下应力相关的热载流子退化

胡靖 , 赵要 , 许铭真 and 谭长华

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Key words: 热载流子, 一次碰撞电离, 二次碰撞电离, 复合

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(4): 436-440
      胡靖, 赵要, 许铭真, 谭长华. HALO结构pMOSFETs在V_g=V_d/2应力模式下应力相关的热载流子退化[J]. 半导体学报(英文版), 2004, 25(4): 436-440.
      Citation:
      胡靖, 赵要, 许铭真, 谭长华. HALO结构pMOSFETs在V_g=V_d/2应力模式下应力相关的热载流子退化[J]. 半导体学报(英文版), 2004, 25(4): 436-440.
      shu

      • Received Date: 2015-08-19

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