| Citation: |
Luo Xiaorong, Zhang Wei, Zhang Bo, Li Zhaoji, Yan Bin, Yang Shouguo. A New High Voltage SOI Device with a Nonuniform Thickness Drift Region and Its Optimization[J]. Journal of Semiconductors, 2008, 29(10): 1902-1906.
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Luo X R, Zhang W, Zhang B, Li Z J, Yan B, Yang S G. A New High Voltage SOI Device with a Nonuniform Thickness Drift Region and Its Optimization[J]. J. Semicond., 2008, 29(10): 1902.
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A New High Voltage SOI Device with a Nonuniform Thickness Drift Region and Its Optimization
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Abstract
A new SOI high-voltage device structure with nonuniform thickness drift region (n-uni SOI) and its optimization design method are proposed.Owing to the nonuniform thickness drift region,the electric field in the SOI layer is modulated and the electric field in the buried layer is enhanced,resulting in an enhancement of breakdown voltage.An analytical model taking the modulation effect into account is presented to optimize the device structure.Based on the analytical model,the dependencies of the electric field distribution and breakdown voltage on the device parameters are investigated.Numerical simulations support the analytical model.The breakdown voltage of the n-uni SOI LDMOS with n=3 is twice as high as that of a conventional SOI while its on-resistance maintains low.-
Keywords:
- SOI,
- nonuniform thickness drift region,
- electric field,
- modulation,
- high voltage
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References
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Proportional views
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