J. Semicond. > 2008, Volume 29 > Issue 10 > 1902-1906
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A New High Voltage SOI Device with a Nonuniform Thickness Drift Region and Its Optimization

Luo Xiaorong, Zhang Wei, Zhang Bo, Li Zhaoji, Yan Bin and Yang Shouguo

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Abstract: A new SOI high-voltage device structure with nonuniform thickness drift region (n-uni SOI) and its optimization design method are proposed.Owing to the nonuniform thickness drift region,the electric field in the SOI layer is modulated and the electric field in the buried layer is enhanced,resulting in an enhancement of breakdown voltage.An analytical model taking the modulation effect into account is presented to optimize the device structure.Based on the analytical model,the dependencies of the electric field distribution and breakdown voltage on the device parameters are investigated.Numerical simulations support the analytical model.The breakdown voltage of the n-uni SOI LDMOS with n=3 is twice as high as that of a conventional SOI while its on-resistance maintains low.

Key words: SOI, nonuniform thickness drift region, electric field, modulation, high voltage

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    虞家琪, F.J.Bryant. 铒离子注入的硫化锌的退火研究[J]. 半导体学报(英文版), 1980, 1(3): 192-197.
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    Received: 18 August 2015 Revised: 05 June 2008 Online: Published: 01 October 2008

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      Article Navigation >  Journal of Semiconductors  > 2008  >  29(10): 1902-1906
      虞家琪, F.J.Bryant. 铒离子注入的硫化锌的退火研究[J]. 半导体学报(英文版), 1980, 1(3): 192-197.
      Citation:
      Luo Xiaorong, Zhang Wei, Zhang Bo, Li Zhaoji, Yan Bin, Yang Shouguo. A New High Voltage SOI Device with a Nonuniform Thickness Drift Region and Its Optimization[J]. Journal of Semiconductors, 2008, 29(10): 1902-1906. ****
      Luo X R, Zhang W, Zhang B, Li Z J, Yan B, Yang S G. A New High Voltage SOI Device with a Nonuniform Thickness Drift Region and Its Optimization[J]. J. Semicond., 2008, 29(10): 1902.
      shu

      A New High Voltage SOI Device with a Nonuniform Thickness Drift Region and Its Optimization

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      Funds:

      国家自然科学基金

      • Received Date: 2015-08-18
      • Accepted Date: 2008-04-04
      • Revised Date: 2008-06-05
      • Published Date: 2008-11-11

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