Citation: |
Guo Weilian, Niu Pingjuan, Miao Changyun, Yu Xin, Wang Wei, Liang Huilai, Zhang Shilin, Li Jianheng, Song Ruiliang, Hu Liuchang, Qi Haitao, Mao Luhong. An Inverter Unified Model of RTT[J]. Journal of Semiconductors, 2007, 28(1): 84-91.
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Guo W L, Niu P J, Miao C Y, Yu X, Wang W, Liang H L, Zhang S L, Li J H, Song R L, Hu L C, Qi H T, Mao L H. An Inverter Unified Model of RTT[J]. Chin. J. Semicond., 2007, 28(1): 84.
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An Inverter Unified Model of RTT
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Abstract
By analyzing resonant tunneling transistors (RTTs) synthesized with different device structures and treating RTTs with different device structures as inverter circuits,a unified inverter model for RTTs is established.In this model,the I-V characteristics of an RTT can be derived and analyzed with the same method used to analyze an inverter.The various I-V characteristics of RTTs with different device structures can then be explained with a unified inverter theory.The results derived by this model are in agreement with those of corresponding circuit simulations and experiments.This unified inverter model of RTTs is a powerful tool for the design and analysis of RTTs. -
References
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