Chin. J. Semicond. > 2004, Volume 25 > Issue 1 > 64-68
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以铝作过渡层的c轴取向Si基ZnO晶体薄膜的生长及其肖特基二极管的研制

李蓓 , 叶志镇 , 黄靖云 , 袁国栋 , 张海燕 and 赵炳辉

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Key words: ZnO薄膜, 磁控溅射, 肖特基势垒, I-V特性

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(1): 64-68
      李蓓, 叶志镇, 黄靖云, 袁国栋, 张海燕, 赵炳辉. 以铝作过渡层的c轴取向Si基ZnO晶体薄膜的生长及其肖特基二极管的研制[J]. 半导体学报(英文版), 2004, 25(1): 64-68.
      Citation:
      李蓓, 叶志镇, 黄靖云, 袁国栋, 张海燕, 赵炳辉. 以铝作过渡层的c轴取向Si基ZnO晶体薄膜的生长及其肖特基二极管的研制[J]. 半导体学报(英文版), 2004, 25(1): 64-68.
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      • Received Date: 2015-08-19

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