Chin. J. Semicond. > 1997, Volume 18 > Issue 2 > 85-90

优化生长的In_xGa_(1-x)As缓冲层上双势垒In_yGa_(1-y)As/Al_zGa_(1-z)As/GaAs/Al_zGa_(1-z)As多量子阱应变状态测量

王小军 , 郑联喜 , 肖智博 , 王玉田 , 胡雄伟 and 王启明

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Received: 19 August 2015 Revised: Online: Published: 01 February 1997

Article Navigation > Journal of Semiconductors > 1997 > 18(2): 85-90

王小军, 郑联喜, 肖智博, 王玉田, 胡雄伟, 王启明. 优化生长的In_xGa_(1-x)As缓冲层上双势垒In_yGa_(1-y)As/Al_zGa_(1-z)As/GaAs/Al_zGa_(1-z)As多量子阱应变状态测量[J]. 半导体学报(英文版), 1997, 18(2): 85-90.

Citation:

王小军, 郑联喜, 肖智博, 王玉田, 胡雄伟, 王启明. 优化生长的In_xGa_(1-x)As缓冲层上双势垒In_yGa_(1-y)As/Al_zGa_(1-z)As/GaAs/Al_zGa_(1-z)As多量子阱应变状态测量[J]. 半导体学报(英文版), 1997, 18(2): 85-90.

王小军, 郑联喜, 肖智博, 王玉田, 胡雄伟, 王启明. 优化生长的In_xGa_(1-x)As缓冲层上双势垒In_yGa_(1-y)As/Al_zGa_(1-z)As/GaAs/Al_zGa_(1-z)As多量子阱应变状态测量[J]. 半导体学报(英文版), 1997, 18(2): 85-90.

Citation:

王小军, 郑联喜, 肖智博, 王玉田, 胡雄伟, 王启明. 优化生长的In_xGa_(1-x)As缓冲层上双势垒In_yGa_(1-y)As/Al_zGa_(1-z)As/GaAs/Al_zGa_(1-z)As多量子阱应变状态测量[J]. 半导体学报(英文版), 1997, 18(2): 85-90.

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