Chin. J. Semicond. > 2004, Volume 25 > Issue 6 > 674-677
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Si基片上掺Ge SiO_2的火焰水解法制备

郜定山 , 李建光 , 王红杰 , 安俊明 , 李健 , 夏君磊 and 胡雄伟

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Key words: 火焰水解, SiO2, GeO2, 折射率, 光波导

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(6): 674-677
      郜定山, 李建光, 王红杰, 安俊明, 李健, 夏君磊, 胡雄伟. Si基片上掺Ge SiO_2的火焰水解法制备[J]. 半导体学报(英文版), 2004, 25(6): 674-677.
      Citation:
      郜定山, 李建光, 王红杰, 安俊明, 李健, 夏君磊, 胡雄伟. Si基片上掺Ge SiO_2的火焰水解法制备[J]. 半导体学报(英文版), 2004, 25(6): 674-677.
      shu

      • Received Date: 2015-08-19

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