Chin. J. Semicond. > 1987, Volume 8 > Issue 5 > 495-502
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氮离子注入形成Si_3N_4埋层构成的SiO_2/Si/Si_3N_4/Si多层结构的研究

陈晖 , 贺晓泉 , 张继盛 and 李志坚

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(5): 495-502
      陈晖, 贺晓泉, 张继盛, 李志坚. 氮离子注入形成Si_3N_4埋层构成的SiO_2/Si/Si_3N_4/Si多层结构的研究[J]. 半导体学报(英文版), 1987, 8(5): 495-502.
      Citation:
      陈晖, 贺晓泉, 张继盛, 李志坚. 氮离子注入形成Si_3N_4埋层构成的SiO_2/Si/Si_3N_4/Si多层结构的研究[J]. 半导体学报(英文版), 1987, 8(5): 495-502.
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      • Received Date: 2015-08-19

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