Chin. J. Semicond. > 2004, Volume 25 > Issue 8 > 976-980
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低电阻率硼硫共掺杂金刚石薄膜的制备

胡晓君 , 李荣斌 , 沈荷生 , 戴永兵 and 何贤昶

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Key words: 共掺杂, 硼硫, n型, 金刚石, 电阻率

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    Received: 19 August 2015 Revised: Online: Published: 01 August 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(8): 976-980
      胡晓君, 李荣斌, 沈荷生, 戴永兵, 何贤昶. 低电阻率硼硫共掺杂金刚石薄膜的制备[J]. 半导体学报(英文版), 2004, 25(8): 976-980.
      Citation:
      胡晓君, 李荣斌, 沈荷生, 戴永兵, 何贤昶. 低电阻率硼硫共掺杂金刚石薄膜的制备[J]. 半导体学报(英文版), 2004, 25(8): 976-980.
      shu

      • Received Date: 2015-08-19

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