Elevated Source/Drain Engineering by Novel Technology for FullyDepleted SOI CMOS Devices and Circuits

Lian , Jun , and , Hai and Chaohe

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Key words: FDSOI, CMOS, elevated source/drain

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Received: 19 August 2015 Revised: Online: Published: 01 April 2005

Article Navigation > Journal of Semiconductors > 2005 > 26(4): 672-676

Lian, Jun, and, Hai, Chaohe. Elevated Source/Drain Engineering by Novel Technology for FullyDepleted SOI CMOS Devices and Circuits[J]. 半导体学报(英文版), 2005, 26(4): 672-676.

Citation:

Lian, Jun, and, Hai, Chaohe. Elevated Source/Drain Engineering by Novel Technology for FullyDepleted SOI CMOS Devices and Circuits[J]. 半导体学报(英文版), 2005, 26(4): 672-676.

Lian, Jun, and, Hai, Chaohe. Elevated Source/Drain Engineering by Novel Technology for FullyDepleted SOI CMOS Devices and Circuits[J]. 半导体学报(英文版), 2005, 26(4): 672-676.

Citation:

Lian, Jun, and, Hai, Chaohe. Elevated Source/Drain Engineering by Novel Technology for FullyDepleted SOI CMOS Devices and Circuits[J]. 半导体学报(英文版), 2005, 26(4): 672-676.

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