Chin. J. Semicond. > 1991, Volume 12 > Issue 2 > 87-92
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As~+沟道注入硅(100)的损伤、二次缺陷及载流子分布特征

张伯旭 , 罗晏 and 王忠烈

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(2): 87-92
      张伯旭, 罗晏, 王忠烈. As~+沟道注入硅(100)的损伤、二次缺陷及载流子分布特征[J]. 半导体学报(英文版), 1991, 12(2): 87-92.
      Citation:
      张伯旭, 罗晏, 王忠烈. As~+沟道注入硅(100)的损伤、二次缺陷及载流子分布特征[J]. 半导体学报(英文版), 1991, 12(2): 87-92.
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      • Received Date: 2015-08-19

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