Chin. J. Semicond. > 2003, Volume 24 > Issue 11 > 1180-1184

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Key words: 富硅氧化硅, 电荷俘获效应, C-V测试, 诱导pn结

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2003

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      于振瑞, 杜金会, 张加友, 李长安, Aceves M. Al/SRO/Si结构中横向电压作用下的电荷俘获效应[J]. 半导体学报(英文版), 2003, 24(11): 1180-1184.
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      于振瑞, 杜金会, 张加友, 李长安, Aceves M. Al/SRO/Si结构中横向电压作用下的电荷俘获效应[J]. 半导体学报(英文版), 2003, 24(11): 1180-1184.

      • Received Date: 2015-08-20

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