Chin. J. Semicond. > 1990, Volume 11 > Issue 4 > 262-269
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离子注入硅形成绝缘埋层的红外反射谱分析

方子韦 , 俞跃辉 , 林成鲁 and 邹世昌

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(4): 262-269
      方子韦, 俞跃辉, 林成鲁, 邹世昌. 离子注入硅形成绝缘埋层的红外反射谱分析[J]. 半导体学报(英文版), 1990, 11(4): 262-269.
      Citation:
      方子韦, 俞跃辉, 林成鲁, 邹世昌. 离子注入硅形成绝缘埋层的红外反射谱分析[J]. 半导体学报(英文版), 1990, 11(4): 262-269.
      shu

      • Received Date: 2015-08-19

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