Chin. J. Semicond. > 2001, Volume 22 > Issue 7 > 908-914
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深亚微米FD-SOI器件亚阈模型

程彬杰 , 邵志标 , 唐天同 , 沈文正 and 赵文魁

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Key words: 表面势, 漏感应势垒降低效应, 亚阈区模型, 全耗尽MOS器件

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(7): 908-914
      程彬杰, 邵志标, 唐天同, 沈文正, 赵文魁. 深亚微米FD-SOI器件亚阈模型[J]. 半导体学报(英文版), 2001, 22(7): 908-914.
      Citation:
      程彬杰, 邵志标, 唐天同, 沈文正, 赵文魁. 深亚微米FD-SOI器件亚阈模型[J]. 半导体学报(英文版), 2001, 22(7): 908-914.
      shu

      • Received Date: 2015-08-20

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