| Citation: |
Liu Tong, Zhu Dazhong. Relative Sensitivity of Sector Split-Drain Magnetic Field-Effect Transistor Based on Geometrical Correction Factor of Sector Hall Plate[J]. Journal of Semiconductors, 2006, 27(12): 2155-2159.
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Liu T, Zhu D Z. Relative Sensitivity of Sector Split-Drain Magnetic Field-Effect Transistor Based on Geometrical Correction Factor of Sector Hall Plate[J]. Chin. J. Semicond., 2006, 27(12): 2155.
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Relative Sensitivity of Sector Split-Drain Magnetic Field-Effect Transistor Based on Geometrical Correction Factor of Sector Hall Plate
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Abstract
The geometrical correction factor of a sector Hall plate is obtained by the method of conformal mapping, according to which we derived the analytical expression of the relative sensitivity of a sector split-drain magnetic field-effect transistor.The mathematical model of relative sensitivity is improved,as verified by simulation and experiment.Compared with a rectangular MAGFET,a sector MAGFET has the advantage of high relative sensitivity.The maximum relative sensitivity obtained in experiment is 3.77%T-1,and our model predicts a maximum relative sensitivity of 3.81%T-1.-
Keywords:
- MAGFET,
- conformal mapping,
- geometrical factor,
- sensitivity,
- model
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References
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Proportional views
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