Chin. J. Semicond. > 1986, Volume 7 > Issue 5 > 547-550
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硅中离子注入层的红外瞬态退火及退火后残留深能级缺陷的DLTS研究

范永平 , 罗晋生 and 周彩弟

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(5): 547-550
      范永平, 罗晋生, 周彩弟. 硅中离子注入层的红外瞬态退火及退火后残留深能级缺陷的DLTS研究[J]. 半导体学报(英文版), 1986, 7(5): 547-550.
      Citation:
      范永平, 罗晋生, 周彩弟. 硅中离子注入层的红外瞬态退火及退火后残留深能级缺陷的DLTS研究[J]. 半导体学报(英文版), 1986, 7(5): 547-550.
      shu

      • Received Date: 2015-08-20

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