Chin. J. Semicond. > 1996, Volume 17 > Issue 1 > 6-10
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气态源分子束外延InP和InAs基Ⅲ－Ⅴ族化合物材料

袁瑞霞，阎春辉，国红熙，李晓兵，朱世荣，曾一平，李灵霄，孔梅影

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    Received: 18 August 2015 Revised: Online: Published: 01 January 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(1): 6-10
      袁瑞霞，阎春辉，国红熙，李晓兵，朱世荣，曾一平，李灵霄，孔梅影. 气态源分子束外延InP和InAs基Ⅲ－Ⅴ族化合物材料[J]. 半导体学报(英文版), 1996, 17(1): 6-10.
      Citation:
      袁瑞霞，阎春辉，国红熙，李晓兵，朱世荣，曾一平，李灵霄，孔梅影. 气态源分子束外延InP和InAs基Ⅲ－Ⅴ族化合物材料[J]. 半导体学报(英文版), 1996, 17(1): 6-10.
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      • Received Date: 2015-08-18

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