Chin. J. Semicond. > 2004, Volume 25 > Issue 8 > 967-971
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低能离子束方法制备重掺杂Fe的Si∶Fe固溶体

刘力锋 , 陈诺夫 , 张富强 , 陈晨龙 , 李艳丽 , 杨少延 and 刘志凯

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Key words: 硅, 铁, 低能离子束, 重掺杂

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    Received: 19 August 2015 Revised: Online: Published: 01 August 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(8): 967-971
      刘力锋, 陈诺夫, 张富强, 陈晨龙, 李艳丽, 杨少延, 刘志凯. 低能离子束方法制备重掺杂Fe的Si∶Fe固溶体[J]. 半导体学报(英文版), 2004, 25(8): 967-971.
      Citation:
      刘力锋, 陈诺夫, 张富强, 陈晨龙, 李艳丽, 杨少延, 刘志凯. 低能离子束方法制备重掺杂Fe的Si∶Fe固溶体[J]. 半导体学报(英文版), 2004, 25(8): 967-971.
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      • Received Date: 2015-08-19

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