Chin. J. Semicond. > 2001, Volume 22 > Issue 5 > 573-579
|

CONTENTS

刻划的富硅二氧化硅/p-Si结构的光致发光和电致发光

孙永科 , 崔晓明 , 张伯蕊 , 秦国刚 , 马振昌 and 宗婉华

+ Author Affiliations

PDF

Key words: 磁控溅射, 光致发光, 电致发光, 高斯峰, 密度缺陷区, 发光中心, 吸除作用

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2190 Times PDF downloads: 781 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 May 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2001  >  22(5): 573-579
      孙永科, 崔晓明, 张伯蕊, 秦国刚, 马振昌, 宗婉华. 刻划的富硅二氧化硅/p-Si结构的光致发光和电致发光[J]. 半导体学报(英文版), 2001, 22(5): 573-579.
      Citation:
      孙永科, 崔晓明, 张伯蕊, 秦国刚, 马振昌, 宗婉华. 刻划的富硅二氧化硅/p-Si结构的光致发光和电致发光[J]. 半导体学报(英文版), 2001, 22(5): 573-579.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return