Chin. J. Semicond. > 2004, Volume 25 > Issue 4 > 446-449
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晶向对InGaP/GaAs HBT性能的影响

石瑞英 , 刘训春 , 孙海峰 and 袁志鹏

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Key words: InGaP/GaAsHBT晶向效应, 直流电流增益, 截止频率, 压电效应, 侧向腐蚀

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(4): 446-449
      石瑞英, 刘训春, 孙海峰, 袁志鹏. 晶向对InGaP/GaAs HBT性能的影响[J]. 半导体学报(英文版), 2004, 25(4): 446-449.
      Citation:
      石瑞英, 刘训春, 孙海峰, 袁志鹏. 晶向对InGaP/GaAs HBT性能的影响[J]. 半导体学报(英文版), 2004, 25(4): 446-449.
      shu

      • Received Date: 2015-08-19

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