Chin. J. Semicond. > 2001, Volume 22 > Issue 3 > 309-312
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利用装置环形永磁场的直拉炉(PMCZ)生长单晶硅和掺锗硅晶体

张维连 , 孙军生 , 张恩怀 and 李嘉席

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Key words: 永磁场直拉炉, 微重力, 锗硅单晶, 热对流

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(3): 309-312
      张维连, 孙军生, 张恩怀, 李嘉席. 利用装置环形永磁场的直拉炉(PMCZ)生长单晶硅和掺锗硅晶体[J]. 半导体学报(英文版), 2001, 22(3): 309-312.
      Citation:
      张维连, 孙军生, 张恩怀, 李嘉席. 利用装置环形永磁场的直拉炉(PMCZ)生长单晶硅和掺锗硅晶体[J]. 半导体学报(英文版), 2001, 22(3): 309-312.
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      • Received Date: 2015-08-20

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