Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 532-535
|

CONTENTS

0.1μｍ槽栅CMOS器件及相关特性

张晓菊, 马晓华, 任红霞, 郝跃 and 孙宝刚

+ Author Affiliations

PDF

Abstract: 通过实验成功得到了0.1μｍ槽栅结构CMOS器件，验证了理论结果的正确性，表明这是一种优良的小尺寸器件结构．该槽栅器件具有阈值电压漂移较小及较好抑制短沟道效应的特点，并分析了目前器件驱动电流较小的原因及解决办法．

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2332 Times PDF downloads: 1731 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2005  >  26(3): 532-535
      张晓菊, 马晓华, 任红霞, 郝跃, 孙宝刚. 0.1μｍ槽栅CMOS器件及相关特性[J]. Journal of Semiconductors, 2005, 26(3): 532-535. ****0.1μｍ槽栅CMOS器件及相关特性[J]. Chin. J. Semicond., 2005, 26(3): 532.
      Citation:
      张晓菊, 马晓华, 任红霞, 郝跃, 孙宝刚. 0.1μｍ槽栅CMOS器件及相关特性[J]. Journal of Semiconductors, 2005, 26(3): 532-535. ****
      0.1μｍ槽栅CMOS器件及相关特性[J]. Chin. J. Semicond., 2005, 26(3): 532.
      shu

      0.1μｍ槽栅CMOS器件及相关特性

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return