Chin. J. Semicond. > 1985, Volume 6 > Issue 4 > 386-392
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LPE-GaAs中0.72eV电子陷阱与生长条件的关系

杨锡权 , 向贤碧 and 吴让元

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(4): 386-392
      杨锡权, 向贤碧, 吴让元. LPE-GaAs中0.72eV电子陷阱与生长条件的关系[J]. 半导体学报(英文版), 1985, 6(4): 386-392.
      Citation:
      杨锡权, 向贤碧, 吴让元. LPE-GaAs中0.72eV电子陷阱与生长条件的关系[J]. 半导体学报(英文版), 1985, 6(4): 386-392.
      shu

      • Received Date: 2015-08-20

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