Chin. J. Semicond. > 1993, Volume 14 > Issue 12 > 723-727

CONTENTS

漏雪崩应力下热载流子注入引起的MOSFET退变特性研究

程玉华 , 李瑞伟 and 李志坚

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2558 Times PDF downloads: 1136 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 December 1993

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1993  >  14(12): 723-727
      程玉华, 李瑞伟, 李志坚. 漏雪崩应力下热载流子注入引起的MOSFET退变特性研究[J]. 半导体学报(英文版), 1993, 14(12): 723-727.
      Citation:
      程玉华, 李瑞伟, 李志坚. 漏雪崩应力下热载流子注入引起的MOSFET退变特性研究[J]. 半导体学报(英文版), 1993, 14(12): 723-727.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return