Chin. J. Semicond. > 1982, Volume 3 > Issue 4 > 340-342

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扩硼Si在连续CO_2激光辐照后的特性

李元恒 , 张玉峰 , 吴书祥 and 杜永昌

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(4): 340-342
      李元恒, 张玉峰, 吴书祥, 杜永昌. 扩硼Si在连续CO_2激光辐照后的特性[J]. 半导体学报(英文版), 1982, 3(4): 340-342.
      Citation:
      李元恒, 张玉峰, 吴书祥, 杜永昌. 扩硼Si在连续CO_2激光辐照后的特性[J]. 半导体学报(英文版), 1982, 3(4): 340-342.
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      • Received Date: 2015-08-20

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