Heteroepitaxial Growth of 3C-SiC Films on Maskless Patterned Silicon Substrates

Zhao Yongmei; Sun Guosheng; Ning Jin; Liu Xingfang; Zhao Wanshun; Wang Lei; Li Jinmin

J. Semicond. > 2008, Volume 29 > Issue 7 > 1254-1257

PAPERS

Heteroepitaxial Growth of 3C-SiC Films on Maskless Patterned Silicon Substrates

Zhao Yongmei, Sun Guosheng, Ning Jin, Liu Xingfang, Zhao Wanshun, Wang Lei and Li Jinmin

+ Author Affiliations

Abstract: Heteroepitaxial growth of 3C-SiC on patterned Si substrates by low pressure chemical vapor deposition (LPCVD) has been investigated to improve the crystal quality of 3C-SiC films.Si substrates were patterned with parallel lines,1 to 10μm wide and spaced 1 to 10μm apart,which was carried out by photolithography and reactive ion etching.Growth behavior on the patterned substrates was systematically studied by scanning electron microscopy (SEM).An air-gap structure and a spherical shape were formed on the patterned Si substrates with different dimensions.The air gap formed after coalescence reduced the stress in the 3C-SiC films,solving the wafer warp and making it possible to grow thicker films.XRD patterns indicated that the films grown on the maskless patterned Si substrates were mainly composed of crystal planes with (111) orientation.

Key words: 3C-SiC, LPCVD, patterned substrates

1	Effect of grain size on the resistivity of polycrystalline 3C-SiC Guo Li, Lei Ge, Mingsheng Xu, Jisheng Han, Xiangang Xu, et al. Journal of Semiconductors. doi: 10.1088/1674-4926/25020018
2	High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiN_x gate insulator for high hole mobility Liyang Zhu, Kuangli Chen, Ying Ma, Yong Cai, Chunhua Zhou, et al. Journal of Semiconductors, 2023, 44(8): 082801. doi: 10.1088/1674-4926/44/8/082801
3	Perspective: optically-pumped III–V quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates Wenqi Wei, Qi Feng, Zihao Wang, Ting Wang, Jianjun Zhang, et al. Journal of Semiconductors, 2019, 40(10): 101303. doi: 10.1088/1674-4926/40/10/101303
4	Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon-germanium substrates Pramod Kumar Tiwari, Gopi Krishna Saramekala, Sarvesh Dubey, Anand Kumar Mukhopadhyay Journal of Semiconductors, 2014, 35(10): 104002. doi: 10.1088/1674-4926/35/10/104002
5	Physical properties of hematite α-Fe₂O₃ thin films: application to photoelectrochemical solar cells S. S. Shinde, R. A. Bansode, C. H. Bhosale, K. Y. Rajpure Journal of Semiconductors, 2011, 32(1): 013001. doi: 10.1088/1674-4926/32/1/013001
6	High-quality homoepitaxial layers grown on 4H-SiC at a high growth rate by vertical LPCVD Wu Hailei, Sun Guosheng, Yang Ting, Yan Guoguo, Wang Lei, et al. Journal of Semiconductors, 2011, 32(4): 043005. doi: 10.1088/1674-4926/32/4/043005
7	Multi-wafer 3C-SiC thin films grown on Si (100) in a vertical HWLPCVD reactor Yan Guoguo, Sun Guosheng, Wu Hailei, Wang Lei, Zhao Wanshun, et al. Journal of Semiconductors, 2011, 32(6): 063001. doi: 10.1088/1674-4926/32/6/063001
8	Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering Zhang Huafu, Lei Chengxin, Liu Hanfa, Yuan Changkun Journal of Semiconductors, 2009, 30(4): 043004. doi: 10.1088/1674-4926/30/4/043004
9	Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications Xie Jing, Liu Yunfei, Yang Jinling, Tang Longjuan, Yang Fuhua, et al. Journal of Semiconductors, 2009, 30(8): 083003. doi: 10.1088/1674-4926/30/8/083003
10	Laterally Electrostatically Driven Poly 3C-SiC Folded-Beam Resonant Microstructures Wang Liang, Zhao Yongmei, Ning Jin, Sun Guosheng, Wang Lei, et al. Journal of Semiconductors, 2008, 29(8): 1453-1456.
11	A Structural Investigation of 3C-SiC Film Hetero-Epitaxial Grown on 6H-SiC Substrate Lin Tao, Li Qingmin, Li Lianbi, Yang Ying, Chen Zhiming, et al. Journal of Semiconductors, 2008, 29(5): 936-939.
12	Mechanism of Thermal Oxidation of 3C.SiC Grown on Si Zhao Yongmei, Sun Guosheng, Liu Xingfang, Li Jiaye, Zhao Wanshun, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 4-3.
13	Fast Epitaxy of 3C-SiC Grown on Si Substrate Li Jiaye, Zhao Yongmei, Liu Xingfang, Sun Guosheng, Wang Lei, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 218-220.
14	Structural Analysis of the SiCGe Epitaxial Layer Grown on SiC Substrate Li Lianbi, Chen Zhiming, Pu Hongbin, Lin Tao, Li Jia, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 123-126.
15	Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD Li Jiaye, Zhao Yongmei, Liu Xingfang, Sun Guosheng, Luo Muchang, et al. Chinese Journal of Semiconductors , 2007, 28(1): 1-4.
16	An All-E-Beam Lithography Process for the Patterningof 2D Photonic Crystal Waveguide Devices Yu Hejun, Yu Jinzhong, Chen Shaowu Chinese Journal of Semiconductors , 2006, 27(11): 1894-1899.
17	Design and Simulation of a Light-Activated Darlington Transistor Based on a SiCGe/3C-SiC Hetero-Structure Chen Zhiming, Ren Ping, Pu Hongbin Chinese Journal of Semiconductors , 2006, 27(2): 254-257.
18	Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films Chinese Journal of Semiconductors , 2005, 26(9): 1681-1687.
19	LPCVD Homoepitaxial Growth on Off-Axis Si-Face 4H-SiC(0001) Substrates Wang Lei, Sun Guosheng, Gao Xin, Zhao Wanshun, Zhang Yongxing, et al. Chinese Journal of Semiconductors , 2005, 26(S1): 113-116.
20	Growth of (111) Textured 3C-SiC on Si (111) by Low Energy Ion Beam Deposition Yang Fei, Chen Nuofu, Zhang Xingwang, Yang Shaoyan, Liu Zhikai, et al. Chinese Journal of Semiconductors , 2005, 26(12): 2385-2389.

Search

GET CITATION

Zhao Yongmei, Sun Guosheng, Ning Jin, Liu Xingfang, Zhao Wanshun, Wang Lei, Li Jinmin. Heteroepitaxial Growth of 3C-SiC Films on Maskless Patterned Silicon Substrates[J]. Journal of Semiconductors, 2008, 29(7): 1254-1257.

Zhao Y M, Sun G S, Ning J, Liu X F, Zhao W S, Wang L, Li J M. Heteroepitaxial Growth of 3C-SiC Films on Maskless Patterned Silicon Substrates[J]. J. Semicond., 2008, 29(7): 1254.

Export: BibTex EndNote

Article Metrics

Article views: 3262 Times PDF downloads: 1078 Times Cited by: 0 Times

History

Received: 18 August 2015 Revised: 25 February 2008 Online: Published: 01 July 2008

Heteroepitaxial growth of 3C-SiC on patterned Si substrates by low pressure chemical vapor deposition (LPCVD) has been investigated to improve the crystal quality of 3C-SiC films.Si substrates were patterned with parallel lines,1 to 10μm wide and spaced 1 to 10μm apart,which was carried out by photolithography and reactive ion etching.Growth behavior on the patterned substrates was systematically studied by scanning electron microscopy (SEM).An air-gap structure and a spherical shape were formed on the patterned Si substrates with different dimensions.The air gap formed after coalescence reduced the stress in the 3C-SiC films,solving the wafer warp and making it possible to grow thicker films.XRD patterns indicated that the films grown on the maskless patterned Si substrates were mainly composed of crystal planes with (111) orientation.

Heteroepitaxial Growth of 3C-SiC Films on Maskless Patterned Silicon Substrates

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Heteroepitaxial Growth of 3C-SiC Films on Maskless Patterned Silicon Substrates

Abstract

References

Proportional views

Catalog

Heteroepitaxial Growth of 3C-SiC Films on Maskless Patterned Silicon Substrates

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Heteroepitaxial Growth of 3C-SiC Films on Maskless Patterned Silicon Substrates

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content