Chin. J. Semicond. > 1980, Volume 1 > Issue 2 > 163-164
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SiO2-Si界面射频等离子体退火性质研究

Zheng You-dou, Wu Feng-mei and Su Zong-he

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1980

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      Article Navigation >  Journal of Semiconductors  > 1980  >  1(2): 163-164
      郑有炓, 吴凤美, 苏宗禾. SiO2-Si界面射频等离子体退火性质研究[J]. 半导体学报(英文版), 1980, 1(2): 163-164.
      Citation:
      郑有炓, 吴凤美, 苏宗禾. SiO2-Si界面射频等离子体退火性质研究[J]. 半导体学报(英文版), 1980, 1(2): 163-164.
      shu

      • Department of Physics, Nanjing University

      • Received Date: 2015-08-20

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