Chin. J. Semicond. > 1991, Volume 12 > Issue 6 > 367-372
|

CONTENTS

高温工艺对TiSi_2/n~+-Poly-Si复合栅MOS电容特性及TiSi_2膜性质的影响

陶江 , 武国英 , 张国炳 , 陈文茹 and 王阳元

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2751 Times PDF downloads: 1138 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 June 1991

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1991  >  12(6): 367-372
      陶江, 武国英, 张国炳, 陈文茹, 王阳元. 高温工艺对TiSi_2/n~+-Poly-Si复合栅MOS电容特性及TiSi_2膜性质的影响[J]. 半导体学报(英文版), 1991, 12(6): 367-372.
      Citation:
      陶江, 武国英, 张国炳, 陈文茹, 王阳元. 高温工艺对TiSi_2/n~+-Poly-Si复合栅MOS电容特性及TiSi_2膜性质的影响[J]. 半导体学报(英文版), 1991, 12(6): 367-372.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return