| Citation: |
Chen Yanhu, Shen Huajun, Wang Xiantai, Ge Ji, Li Bin, Liu Xinyu, Wu Dexin. X Band MMIC Power Amplifier Based on InGaP/GaAs HBT[J]. Journal of Semiconductors, 2007, 28(5): 759-762.
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Chen Y H, Shen H J, Wang X T, Ge J, Li B, Liu X Y, Wu D X. X Band MMIC Power Amplifier Based on InGaP/GaAs HBT[J]. Chin. J. Semicond., 2007, 28(5): 759.
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X Band MMIC Power Amplifier Based on InGaP/GaAs HBT
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Abstract
An X band InGaP/GaAs HBT single stage MMIC power amplifier is reported.The self-aligning InGaP/GaAs HBT process was used to fabricate the circuit.The PA circuit is biased at the class AB state.The small signal S parameter test shows that at 8~8.5GHz,the linear power gain is 8~9dB,VSWRin＜2,and VSWRout＜3.After optimizing the collector bias,the linear gain is improved to 9~10dB.Under an 8.5GHz CW signal power test with optimized loading conditions,the P1dB of the circuit is 29.4dBm,relevant power gain is 7.2dB,and relevant PAE is 42%.The Psat of the circuit is 30dBm. -
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