Chin. J. Semicond. > 2003, Volume 24 > Issue 12 > 1280-1284
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p型GaN材料的表面物理特性

薛松 , 韩彦军 , 郭文平 , 孙长征 , 郝智彪 and 罗毅

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Key words: p-GaN, 表面处理, XPS, AES

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(12): 1280-1284
      薛松, 韩彦军, 郭文平, 孙长征, 郝智彪, 罗毅. p型GaN材料的表面物理特性[J]. 半导体学报(英文版), 2003, 24(12): 1280-1284.
      Citation:
      薛松, 韩彦军, 郭文平, 孙长征, 郝智彪, 罗毅. p型GaN材料的表面物理特性[J]. 半导体学报(英文版), 2003, 24(12): 1280-1284.
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      • Received Date: 2015-08-20

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