Chin. J. Semicond. > 2002, Volume 23 > Issue 11 > 1182-1186
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利用AFM动态电场在Si表面实现纳米氧化结构

胡晓东 , 郭彤 and 胡小唐

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Key words: 原子力显微镜, 电场诱导阳极氧化, 纳米加工, 动态电场

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(11): 1182-1186
      胡晓东, 郭彤, 胡小唐. 利用AFM动态电场在Si表面实现纳米氧化结构[J]. 半导体学报(英文版), 2002, 23(11): 1182-1186.
      Citation:
      胡晓东, 郭彤, 胡小唐. 利用AFM动态电场在Si表面实现纳米氧化结构[J]. 半导体学报(英文版), 2002, 23(11): 1182-1186.
      shu

      • Received Date: 2015-08-19

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