Chin. J. Semicond. > 2002, Volume 23 > Issue 1 > 11-15
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新的正向栅控二极管技术分离热载流子应力诱生SOI NMOSFET界面陷阱和界面电荷的研究(英文)

何进 , 张兴 , 黄如 and 王阳元

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Key words: 热载流子应力效应, 界面陷阱, 界面电荷R-G电流, 栅控二极管, SOI NMOSFET

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(1): 11-15
      何进, 张兴, 黄如, 王阳元. 新的正向栅控二极管技术分离热载流子应力诱生SOI NMOSFET界面陷阱和界面电荷的研究(英文)[J]. 半导体学报(英文版), 2002, 23(1): 11-15.
      Citation:
      何进, 张兴, 黄如, 王阳元. 新的正向栅控二极管技术分离热载流子应力诱生SOI NMOSFET界面陷阱和界面电荷的研究(英文)[J]. 半导体学报(英文版), 2002, 23(1): 11-15.
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      • Received Date: 2015-08-19

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