Chin. J. Semicond. > 2001, Volume 22 > Issue 5 > 609-612
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选择区域生长高质量InGaAsP多量子阱材料

刘国利 , 王圩 , 张佰君 , 许国阳 , 陈娓兮 , 叶小玲 , 张静媛 , 汪孝杰 and 朱洪亮

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Key words: 选择区域生长, LP-MOCVD, InGaAsP, 多量子阱, EML

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(5): 609-612
      刘国利, 王圩, 张佰君, 许国阳, 陈娓兮, 叶小玲, 张静媛, 汪孝杰, 朱洪亮. 选择区域生长高质量InGaAsP多量子阱材料[J]. 半导体学报(英文版), 2001, 22(5): 609-612.
      Citation:
      刘国利, 王圩, 张佰君, 许国阳, 陈娓兮, 叶小玲, 张静媛, 汪孝杰, 朱洪亮. 选择区域生长高质量InGaAsP多量子阱材料[J]. 半导体学报(英文版), 2001, 22(5): 609-612.
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      • Received Date: 2015-08-20

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