| Citation: |
Chen Liqun, Li Cheng. Design and Simulation of Si-Based Resonant-Cavity-Enhanced Waveguide Photodetectors[J]. Journal of Semiconductors, 2006, 27(8): 1476-1479.
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Chen L Q, Li C. Design and Simulation of Si-Based Resonant-Cavity-Enhanced Waveguide Photodetectors[J]. Chin. J. Semicond., 2006, 27(8): 1476.
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Design and Simulation of Si-Based Resonant-Cavity-Enhanced Waveguide Photodetectors
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Abstract
We propose a novel SiGe resonant-cavity-enhanced photodetector that operates at 1.3μm.The device is composed of two Bragg reflectors and a waveguide absorption region.Compared to conventional waveguide photodetectors,the device can be designed with a small enough area for high-speed operation.The limitation of the SiGe critical thickness is circumvented, and the photodetector is expected to have high quantum efficiency.The structure is optimized through numerical simulation and a quantum efficiency of 20% is expected with a 7.6μm-long waveguide.-
Keywords:
- Si/SiGe,
- resonant-cavity-enhanced waveguide,
- photodetector
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References
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