| Citation: |
Deng Jiajun, Zhao Jianhua, Jiang Chunping, Niu Zhichuan, Yang Fuhua, Wu Xiaoguang, Zheng Houzhi. Enhancement of Ferromagnetic Transition Temperature in (GaMn)As by Post-Growth Annealing[J]. Journal of Semiconductors, 2005, 26(S1): 42-44.
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Deng J J, Zhao J H, Jiang C P, Niu Z C, Yang F H, Wu X G, Zheng H Z. Enhancement of Ferromagnetic Transition Temperature in (GaMn)As by Post-Growth Annealing[J]. Chin. J. Semicond., 2005, 26(13): 42.
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Enhancement of Ferromagnetic Transition Temperature in (GaMn)As by Post-Growth Annealing
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Abstract
A diluted magnetic semiconductor (Ga,Mn)As film is grown on semi-insulating (001) GaAs by low-temperature molecular beam epitaxy.X-ray diffraction pattern shows its zincblende structure with a lattice constant of 0.5683nm,which corresponds to a nominal Mn composition of 7%.Magnetic measurements reveal that the ferromagnetic transition temperature is 65K.Effect of low-temperature annealing on magnetic properties of (Ga,Mn)As is also investigated.The ferromagnetic transition temperature is increased up to 115K after annealing. -
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