Chin. J. Semicond. > 2001, Volume 22 > Issue 10 > 1277-1283
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脉冲ArF准分子激光淀积SiC/Si(100)薄膜的最佳晶化温度及光致发光

王玉霞 , 曹颖 , 何海平 , 汤洪高 , 王连卫 , 黄继颇 and 林成鲁

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Key words: 激光淀积, SiC薄膜, 晶化

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(10): 1277-1283
      王玉霞, 曹颖, 何海平, 汤洪高, 王连卫, 黄继颇, 林成鲁. 脉冲ArF准分子激光淀积SiC/Si(100)薄膜的最佳晶化温度及光致发光[J]. 半导体学报(英文版), 2001, 22(10): 1277-1283.
      Citation:
      王玉霞, 曹颖, 何海平, 汤洪高, 王连卫, 黄继颇, 林成鲁. 脉冲ArF准分子激光淀积SiC/Si(100)薄膜的最佳晶化温度及光致发光[J]. 半导体学报(英文版), 2001, 22(10): 1277-1283.
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      • Received Date: 2015-08-20

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