Chin. J. Semicond. > 1996, Volume 17 > Issue 11 > 852-857
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氧化物中固定电荷对硅场致发射的影响

黄庆安

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    Received: 18 August 2015 Revised: Online: Published: 01 November 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(11): 852-857
      黄庆安. 氧化物中固定电荷对硅场致发射的影响[J]. 半导体学报(英文版), 1996, 17(11): 852-857.
      Citation:
      黄庆安. 氧化物中固定电荷对硅场致发射的影响[J]. 半导体学报(英文版), 1996, 17(11): 852-857.
      shu

      • Received Date: 2015-08-18

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