Chin. J. Semicond. > 2005, Volume 26 > Issue 7 > 1384-1389
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SiGe HBT发射极延迟时间模型

胡辉勇 , 张鹤鸣 , 戴显英 , 朱永刚 , 王顺祥 , 王伟 , 崔晓英 , 王青 and 王喜媛

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Key words: SiGe HBT, 势垒电容, 发射极延迟时间

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    Received: 18 August 2015 Revised: Online: Published: 01 July 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(7): 1384-1389
      胡辉勇, 张鹤鸣, 戴显英, 朱永刚, 王顺祥, 王伟, 崔晓英, 王青, 王喜媛. SiGe HBT发射极延迟时间模型[J]. 半导体学报(英文版), 2005, 26(7): 1384-1389.
      Citation:
      胡辉勇, 张鹤鸣, 戴显英, 朱永刚, 王顺祥, 王伟, 崔晓英, 王青, 王喜媛. SiGe HBT发射极延迟时间模型[J]. 半导体学报(英文版), 2005, 26(7): 1384-1389.
      shu

      • Received Date: 2015-08-18

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