Chin. J. Semicond. > 2004, Volume 25 > Issue 4 > 410-414
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Si(111)衬底无微裂GaN的MOCVD生长

张宝顺 , 伍墨 , 陈俊 , 沈晓明 , 冯淦 , 刘建平 , 史永生 , 段丽宏 , 朱建军 , 杨辉 and 梁骏吾

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Key words: GaN, 应力, MOVPE, 微裂

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(4): 410-414
      张宝顺, 伍墨, 陈俊, 沈晓明, 冯淦, 刘建平, 史永生, 段丽宏, 朱建军, 杨辉, 梁骏吾. Si(111)衬底无微裂GaN的MOCVD生长[J]. 半导体学报(英文版), 2004, 25(4): 410-414.
      Citation:
      张宝顺, 伍墨, 陈俊, 沈晓明, 冯淦, 刘建平, 史永生, 段丽宏, 朱建军, 杨辉, 梁骏吾. Si(111)衬底无微裂GaN的MOCVD生长[J]. 半导体学报(英文版), 2004, 25(4): 410-414.
      shu

      • Received Date: 2015-08-19

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