Chin. J. Semicond. > 1999, Volume 20 > Issue 1 > 11-18
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GaN、AlN的形变势和应变层GaN/AlN异质结带阶的计算

何国敏 , 王仁智 , 吴正云 , 郑永梅 and 蔡淑惠

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(1): 11-18
      何国敏, 王仁智, 吴正云, 郑永梅, 蔡淑惠. GaN、AlN的形变势和应变层GaN/AlN异质结带阶的计算[J]. 半导体学报(英文版), 1999, 20(1): 11-18.
      Citation:
      何国敏, 王仁智, 吴正云, 郑永梅, 蔡淑惠. GaN、AlN的形变势和应变层GaN/AlN异质结带阶的计算[J]. 半导体学报(英文版), 1999, 20(1): 11-18.
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      • Received Date: 2015-08-20

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